| PART |
Description |
Maker |
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SHF-0189 SHF-0189Z |
C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
0.05 - 6 GHz, 0.5 Watt GaAs HFET
|
SIRENZA MICRODEVICES INC
List of Unclassifed Manufacturers
ETC[ETC]
SIRENZA[SIRENZA MICRODEVICES]
|
| AM42-0054 |
1 Watt / 2 Watt L-Band Power Amplifier 1.435 - 1.525 GHz
|
Tyco Electronics
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| MGF0907B 0907B MGF0907 |
L,S BAND POWER GaAs FET
From old datasheet system
L, S BAND POWER GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| CMM1631-SM-0G00 CMM1631-SM-0G0T CMM1631-SM0608 MIM |
16.0-18.0 GHz 1.5-Watt Power Amplifier 16000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
16.0-18.0 GHz 1.5-Watt Power Amplifier 16.0-18.0千兆50瓦功率放大器
|
Mimix Broadband, Inc.
|
